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| v03.1103 MICROWAVE CORPORATION HMC308 GENERAL PURPOSE 100 mW GaAs MMIC AMPLIFIER, 0.8 - 3.8 GHz Features Gain: 18 dB P1dB Output Power: +17 dBm@ +5V Single Supply: +3V or +5V No External Components Integrated DC Blocks Ultra Small Package: SOT26 8 AMPLIFIERS - SMT Typical Applications Broadband or Narrow Band Applications: * Cellular/PCS/3G * Fixed Wireless & Telematics * Cable Modem Termination Systems * WLAN, Bluetooth & RFID Functional Diagram General Description The HMC308 is a low cost MESFET MMIC amplifier that operates from a single +3 to +5V supply from 0.8 to 3.8 GHz. The surface mount SOT26 amplifier can be used as a broadband amplifier stage or used with external matching for optimized narrow band applications. With Vdd biased at +5V, the HMC308 offers 18 dB of gain and +20 dBm of saturated output power while requiring only 53 mA of current. This amplifier is ideal as a driver amplifier for transmitters or for use as a local oscillator (LO) amplifier to increase drive levels for passive mixers. The amplifier occupies 0.014 in2 (9 mm2), making it ideal for compact radio designs. Electrical Specifications, TA = +25 C, as a function of Vdd Vdd = +3V Parameter Min. Frequency Range Gain Gain Variation over Temperature Input Return Loss Output Return Loss Output Power for 1 dB Compression (P1dB) Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Idd) 23 12 13 Typ. 2.3 - 2.7 15.5 0.025 11 17 14 17 26 7 50 27 14 0.035 14 Max. Min. Typ. 0.8 - 2.3 18 0.025 8 13 17 20 30 7.5 53 26 13.5 0.035 13 Max. Min. Typ. 2.3 - 2.7 16 0.025 11 12 16.5 19.5 29 7 53 24 12 0.035 10 Max. Min. Typ. 2.7 - 3.8 13 0.025 13 13 15 17 27 7 53 0.035 Max. GHz dB dB/C dB dB dBm dBm dBm dB mA Vdd = +5V Vdd = +5V Vdd = +5V Units 8 - 42 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v03.1103 HMC308 GENERAL PURPOSE 100 mW GaAs MMIC AMPLIFIER, 0.8 - 3.8 GHz Broadband Gain & Return Loss @ Vdd = +5V 25 20 15 RESPONSE (dB) 10 P1dB vs. Vdd Bias 24 22 20 18 P1dB (dBm) 8 AMPLIFIERS - SMT 8 - 43 5 0 -5 -10 -15 -20 -25 0 0.5 1 1.5 2 S11 S21 S22 16 14 12 10 8 6 Vdd=+5V Vdd=+3V 2.5 3 3.5 4 4.5 5 5.5 6 4 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) FREQUENCY (GHz) Gain vs. Temperature @ Vdd = +5V 24 22 20 18 16 GAIN (dB) 14 12 10 8 6 4 2 0 0.5 1 1.5 2 2.5 3 3.5 4 +25C +85C -40C Gain vs. Temperature @ Vdd = +3V 24 22 20 18 16 GAIN (dB) 14 12 10 8 6 4 2 0 0.5 1 1.5 2 2.5 3 3.5 4 +25C +85C -40C FREQUENCY (GHz) FREQUENCY (GHz) Input & Output Return Loss vs. Vdd Bias 0 -5 RETURN LOSS (dB) -10 -15 -20 -25 -30 -35 0.5 S11 Vdd=+5V S22 Vdd=+5V S11 Vdd=+3V S22 Vdd=+3V Reverse Isolation vs. Vdd Bias 0 REVERSE ISOLATION (dB) -10 -20 -30 -40 -50 -60 0.5 Vdd=+5V Vdd=+3V 1 1.5 2 2.5 3 3.5 4 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v03.1103 MICROWAVE CORPORATION HMC308 GENERAL PURPOSE 100 mW GaAs MMIC AMPLIFIER, 0.8 - 3.8 GHz 8 AMPLIFIERS - SMT Power Compression @ 2.0 GHz, Vdd = +5V 30 28 26 Pout Gain 24 PAE 22 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -20 -18 -16 -14 -12 -10 -8 Pout (dBm), GAIN (dB), PAE (%) Power Compression @ 2.5 GHz, Vdd = +5V 30 28 26 Pout 24 Gain 22 PAE 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -20 -18 -16 -14 -12 -10 -8 Pout (dBm), GAIN (dB), PAE (%) -6 -4 -2 0 2 4 6 -6 -4 -2 0 2 4 6 INPUT POWER (dBm) INPUT POWER (dBm) Psat vs. Temperature @ Vdd = +5V 24 22 P1dB vs. Temperature @ Vdd = +5V 24 22 OUTPUT P1dB (dBm) 20 18 16 14 12 10 8 6 +25C +85C -40C 20 18 Psat (dBm) 16 14 12 10 8 6 4 0.5 1 1.5 2 2.5 3 3.5 4 +25C +85C -40C 4 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) FREQUENCY (GHz) Output IP3 vs. Temperature @ Vdd = +5V 40 38 36 34 32 30 28 26 24 22 20 18 16 14 12 10 0.5 OUTPUT IP3 (dBm) +25C +85C -40C 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) 8 - 44 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v03.1103 MICROWAVE CORPORATION HMC308 GENERAL PURPOSE 100 mW GaAs MMIC AMPLIFIER, 0.8 - 3.8 GHz Power Compression @ 2.0 GHz, Vdd = +3V 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -20 -18 -16 -14 -12 -10 -8 Pout (dBm), GAIN (dB), PAE (%) Power Compression @ 2.5 GHz, Vdd = +3V 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -20 -18 -16 -14 -12 -10 -8 Pout (dBm), GAIN (dB), PAE (%) 8 AMPLIFIERS - SMT 8 - 45 Pout Gain PAE Pout Gain PAE -6 -4 -2 0 2 4 6 -6 -4 -2 0 2 4 6 INPUT POWER (dBm) INPUT POWER (dBm) Psat vs. Temperature @ Vdd = +3V 24 22 P1dB vs. Temperature @ Vdd = +3V 24 22 OUTPUT P1dB (dBm) 20 18 16 14 12 10 8 6 +25C +85C -40C 20 18 Psat (dBm) 16 14 12 10 8 6 4 0.5 1 1.5 2 2.5 3 3.5 4 +25C +85C -40C 4 0.5 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) FREQUENCY (GHz) Output IP3 vs. Temperature @ Vdd = +3V 40 38 36 34 32 30 28 26 24 22 20 18 16 14 12 10 0.5 OUTPUT IP3 (dBm) +25C +85C -40C 1 1.5 2 2.5 3 3.5 4 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v03.1103 MICROWAVE CORPORATION HMC308 GENERAL PURPOSE 100 mW GaAs MMIC AMPLIFIER, 0.8 - 3.8 GHz 8 AMPLIFIERS - SMT Absolute Maximum Ratings Drain Bias Voltage (Vdd) RF Input Power (RFin)(Vdd = +5.0 Vdc) Channel Temperature Continuous Pdiss (T = 85 C) (derate 6.25 mW/C above 85 C) Thermal Resistance (channel to lead) Storage Temperature Operating Temperature +7.0 Vdc Typical Supply Current vs. Vdd Vdd (Vdc) +2.5 Idd (mA) 49 50 51 50 53 54 +10 dBm 150 C 0.406 W +3.0 +3.5 +4.5 +5.0 160 C/W -65 to +150 C -40 to +85 C +5.5 Outline Drawing NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEADFRAME MATERIAL: COPPER ALLOY 3. LEADFRAME PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND. 8 - 46 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v03.1103 MICROWAVE CORPORATION HMC308 GENERAL PURPOSE 100 mW GaAs MMIC AMPLIFIER, 0.8 - 3.8 GHz Pin Descriptions Pin Number Function Description Interface Schematic 8 AMPLIFIERS - SMT 8 - 47 1 RF OUT This pin is AC coupled and matched to 50 Ohms. 2, 5, 6 GND These pins must be connected to RF/DC ground. 3 Vdd Power supply voltage. 4 RF IN This pin is AC coupled and matched to 50 Ohms. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com v03.1103 MICROWAVE CORPORATION HMC308 GENERAL PURPOSE 100 mW GaAs MMIC AMPLIFIER, 0.8 - 3.8 GHz 8 AMPLIFIERS - SMT Evaluation PCB List of Material Item J1, J2 J3, J4 U1 PCB* Description PC Mount SMA Connector DC Pins HMC308 Amplifier 103220 Evaluation Board The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. *Circuit Board Material: Roger 4350 8 - 48 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com MICROWAVE CORPORATION v03.1103 HMC308 GENERAL PURPOSE 100 mW GaAs MMIC AMPLIFIER, 0.8 - 3.8 GHz Notes: 8 AMPLIFIERS - SMT For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com 8 - 49 |
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